| PECVD법에 의해 증착된 SiO2 후막의 광학적 성질 및 구조적 분석 |
| 조성민, 김용탁, 서용곤1, 윤형도1, 임영민1, 윤대호 |
성균관대학교 신소재공학과
1전자부품연구원 광부품연구센터 |
| Optical Properties and Structural Analysis of SiO2 Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition |
| Sung-Min Cho, Yong-Tak Kim, Yong-Gon Seo1, Hyung-Do Yoon1, Young-Min Im1, Dae-Ho Yoon |
Department of Advanced Materials Engineering, Sungkyunkwan University
1Optical Telecommunication Research Center, Korea Electronics Technology Institute |
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| ABSTRACT |
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Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM). |
| Key words:
PECVD, Optical waveguide, Silicon dioxide, PLC |
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