| Home | E-Submission | Sitemap | Login | Contact Us |  
J. Korean Ceram. Soc. > Volume 39(5); 2002 > Article
Journal of the Korean Ceramic Society 2002;39(5): 479.
doi: https://doi.org/10.4191/kcers.2002.39.5.479
PECVD법에 의해 증착된 SiO2 후막의 광학적 성질 및 구조적 분석
조성민, 김용탁, 서용곤1, 윤형도1, 임영민1, 윤대호
성균관대학교 신소재공학과
1전자부품연구원 광부품연구센터
Optical Properties and Structural Analysis of SiO2 Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition
Sung-Min Cho, Yong-Tak Kim, Yong-Gon Seo1, Hyung-Do Yoon1, Young-Min Im1, Dae-Ho Yoon
Department of Advanced Materials Engineering, Sungkyunkwan University
1Optical Telecommunication Research Center, Korea Electronics Technology Institute
Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).
Key words: PECVD, Optical waveguide, Silicon dioxide, PLC
Editorial Office
Meorijae Bldg., Suite # 403, 76, Bangbae-ro, Seocho-gu, Seoul 06704, Korea
TEL: +82-2-584-0185   FAX: +82-2-586-4582   E-mail: ceramic@kcers.or.kr
About |  Browse Articles |  Current Issue |  For Authors and Reviewers
Copyright © The Korean Ceramic Society.                      Developed in M2PI