| Home | E-Submission | Sitemap | Login | Contact Us |  
J. Korean Ceram. Soc. > Volume 38(11); 2001 > Article
Journal of the Korean Ceramic Society 2001;38(11): 1037.
PECVD법에 의해 증착된 $SiO_2$후막 특성에서 $N_2O$/$SiH_4$Flow Ratio와 RF Power가 미치는 영향
조성민, 김용탁, 서용곤1, 임영민1, 윤대호
성균관대학교 신소재공학과
1전자부품연구원 광부품연구센터
Effects of $N_2O$/$SiH_4$Flow Ratio and RF Power on Properties of $SiO_2$Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition
Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${mu}{textrm}{m}$/h to maximum 10.1${mu}{textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${mu}{textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).
Key words: PECVD, Waveguide, Silicon dioxide
Editorial Office
Meorijae Bldg., Suite # 403, 76, Bangbae-ro, Seocho-gu, Seoul 06704, Korea
TEL: +82-2-584-0185   FAX: +82-2-586-4582   E-mail: ceramic@kcers.or.kr
About |  Browse Articles |  Current Issue |  For Authors and Reviewers
Copyright © The Korean Ceramic Society.                      Developed in M2PI