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J. Korean Ceram. Soc. > Volume 37(2); 2000 > Article
Journal of the Korean Ceramic Society 2000;37(2): 194.
PECVD법에 의해 제조된 Sb-doped $SnO_2$ 박막의 증착거동 및 전기적 특성
김근수, 서지윤, 이희영1, 김광호
부산대학교 무기재료공학과
1영남대학교 재료금속공학부
Deposition Behaviors and Electrical Properties of Sb-doped $SnO_2$ Films by Plasma Enhanced Chemical Vapor Deposition
Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.
Key words: Tin oxide, Sb doping, PECVD, Deposition rate, Surface roughness, Electrical resistivity
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