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Electrical Characteristics of Al2O3/TaAlO4/SiO2 Multi-layer Films by Different Tunnel Oxide Thicknesses and Annealing Treatment
Jung-Tae Park, Hyo-June Kim, Doo-Jin Choi
J. Korean Ceram. Soc. 2010;47(5):461
DOI: https://doi.org/10.4191/kcers.2010.47.5.461
      
Effects of Thermal Heat Treatment Process on the Ferroelectric Properties of ReMnO3 (Re:Ho, Er) Thin Films
Eung Soo Kim, Jung-Hoon Chae
J. Korean Ceram. Soc. 2005;42(11):763
DOI: https://doi.org/10.4191/kcers.2005.42.11.763
      
Fabrication of Nd-Substituted Bi4Ti3O12 Thin Films by Metal Organic Chemical Vapor Deposition and Their Ferroelectrical Characterization
Hyoeng-Ki Kim, Dong-Kyun Kang, Byong-Ho Kim
J. Korean Ceram. Soc. 2005;42(4):219
DOI: https://doi.org/10.4191/kcers.2005.42.4.219
      
Nucleation Enhancing Effect of Different ECR Plasmas Pretreatment in the RUO2 Film Growth by MOCVD
Taejong Eom, Yunkyu Park, Chongmu Lee
J. Korean Ceram. Soc. 2005;42(2):94
DOI: https://doi.org/10.4191/kcers.2005.42.2.094
      
Effects of Hydrogen Plasma Treatment of the Underlying TaSiN Film Surface on the Copper Nucleation in Copper MOCVD
Hyun-Ah Park, Jong-Min Lim, Chong-Mu Lee
J. Korean Ceram. Soc. 2004;41(6):435
DOI: https://doi.org/10.4191/kcers.2004.41.6.435
      
A Study on fabrication of Ferroelectric SBT Thin Films by Liquid Delivery MOCVD Process
강동균, 백승규, 송석표, 김병호
J. Korean Ceram. Soc. 2003;40(1):46
DOI: https://doi.org/10.4191/kcers.2003.40.1.046
         Cited By 1
Electrical Properties of ReMnO3(Re:Y, Ho, Er) Thin Film Prepared by MOCVD Method
Eung Soo Kim, Jung-Hoon Chae, Seung-Gu Kang
J. Korean Ceram. Soc. 2002;39(12):1128
DOI: https://doi.org/10.4191/kcers.2002.39.12.1128
      
Preparation of AlN Thin Film with New Type of Single Precursor
최승철, 안창규, 한성환
J. Korean Ceram. Soc. 2001;38(8):761
      
Preparation and Electrical Properties of $YMnO_3$Thin Film by MOCVD Method
김응수, 노승현, 김유택, 강승구, 심광보
J. Korean Ceram. Soc. 2001;38(5):474
      
Photocatalytic Characteristics of $TiO_2$ Films by LPMOCVD
이하용, 박용환
J. Korean Ceram. Soc. 1999;36(12):1303
      
Properties of TiO$_2$ Thin Film Deposited by LPMOCVD
이하용, 박용환, 고경현, 박정훈, 홍국선
J. Korean Ceram. Soc. 1999;36(9):901
      
Effect of Rapid Thermal Annealing and Orientation of Si Substrate on Structural and Electrical Properties of MOCVD-grown TiO2 Thin Films
왕채현, 최두진
J. Korean Ceram. Soc. 1998;35(1):88
      
Effect of Deposition Temperature and Oxygen on the Growth of $RuO_2$ Thin Films Deposited by Metalorganic Chemical Vapor Deposition
신웅철, 윤순길
J. Korean Ceram. Soc. 1997;34(3):241
      
Characterization of $RuO_2$ Thin Films by Hot-wall Metal Organic Chemical Vapor Deposition
신웅철, 윤순길
J. Korean Ceram. Soc. 1996;33(9):969
      
Dependences of $PbTiO_3$ Thin Films on Ti Bath Temperature and Deposition Temperature
왕채현, 한영기, 염상섭, 최두진
J. Korean Ceram. Soc. 1996;33(4):371
      
Preparation and Electrical Properties of $SrTiO_3$ Thin Films by Plasma Enhanced Metal Organic Chemical vapor Deposition
김남경, 윤순길
J. Korean Ceram. Soc. 1996;33(2):177
      
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