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Journal of the Korean Ceramic Society 1996;33(4): 371. |
| MOCVD법에 의한 $PbTiO_3$ 박막 증착시 Ti Bath 온도와 기판오도 변화에 따른 박막의 증착특성 |
| 왕채현, 한영기, 염상섭, 최두진1 |
한국과학기술연구원 응용물리연구실
1연세대학교 세라믹공학과 |
| Dependences of $PbTiO_3$ Thin Films on Ti Bath Temperature and Deposition Temperature |
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| ABSTRACT |
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PbTiO3 thin films were grown on Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition (MOCVD) using Pb(tmhd)2 and titanium ttra-isopropoxide(TTIP) as precusors. Temperature of TTIP bath and deposition temperature were varied in the range 30-4$0^{circ}C$and 430-63$0^{circ}C$ respectively. As the TTIP bath temperature was increased from 3$0^{circ}C$ to 4$0^{circ}C$ with deposition temperature of 53$0^{circ}C$ the films tend to have TiO2-x and PbTiO3 phases with rough surface. The PbTiO3 thin film was amorphous at low deposition temperature (43$0^{circ}C$) while the polycrystalline thin films were obtained at higher temperature(500-63$0^{circ}C$) from the results of XRD, SEM. AFM. Values of dielectric constant and the dielectric loss were 70-450 and 0.01-0.3 in the range from 0.3 kHz to 1000 kHz repectively. Composition of the as-deposited films at 43$0^{circ}C$ was close to stoichiomet-ric value by AES analysis. AES depth profile indicated no severe interfacial reaction between the film and bottom electrode without showng out-diffusion of Tilayer |
| Key words:
MOCVD, $PbTiO_3$, Thin film |
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