Characterization of <tex>$RuO_2$</tex> Thin Films by Hot-wall Metal Organic Chemical Vapor Deposition

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J. Korean Ceram. Soc. > Volume 33(9); 1996 > Article

Journal of the Korean Ceramic Society 1996;33(9): 969.

Hot-wall MOCVD에 의한 $RuO_2$ 박막의 특성

신웅철, 윤순길

충남대학교 재료공학과 전자요업연구실

Characterization of $RuO_2$ Thin Films by Hot-wall Metal Organic Chemical Vapor Deposition

ABSTRACT

RuO2 thin films were deposited on SiO2(1000 $AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$AA$-thick RuO2 thin films deposted at 30$0^{circ}C$ was 52.7$mu$$Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.

Key words: $RuO_2$, MOCVD, Resistivity, Electrode