A Comparative Study on the Characteristics of TiN Films Deposited by Plasma-Assisted CVD, Ion Plating and Reactive Sputtering

,; ,; ,; ,; ,; ,; ,; ,

J. Korean Ceram. Soc. > Volume 31(7); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(7): 731.

플라즈마 화학증착법, 이온 플레이팅법 및 반응성 스퍼터링법에 의해 증착된 TiN 박막의 특성 비교 연구

안치범, 정병진¹, 이원종, 천성순

한국과학기술원 전자재료공학과
¹한국종합기계주식회사 부설연구소

A Comparative Study on the Characteristics of TiN Films Deposited by Plasma-Assisted CVD, Ion Plating and Reactive Sputtering

ABSTRACT

TiN films were deposited on high speed steels by plasma assisted chemical vapor deposition (PACVD), cathode arc ion plating (CAIP) and reactive magnetron sputtering (RMS). The properties of the films deposited by the three different methods were compared. The preferred oriented plane of PACVD-TiN is (200) and those of CAIP-TiN and RMS-TiN are (111). PACVD-TiN shows a dome surface and a microstructure having small grains. CAIP-TiN shows the highest microhardness and the best adhesion strength of the three because it has a dense microstructure and an ill-defined interface. But is shows the greatest surface roughness due to the Ti droplet created by the arc. RMS-TiN shows a microstructure having large voids so that its properties in microhardness and adhesion are the worst of the three.