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J. Korean Ceram. Soc. > Volume 41(2); 2004 > Article
Journal of the Korean Ceramic Society 2004;41(2): 106.
doi: https://doi.org/10.4191/kcers.2004.41.2.106
RF 마그네트론 스퍼터링에 의한 NiO 박막 증착시 산소 유량비가 박막의 결정 배향성에 미치는 영향
류현욱, 최광표, 노효섭1, 박용주, 박진성1
조선대학교 에너지자원신기술연구소
1조선대학교 신소재공학과
Effects of Oxygen Flow Ratio on the Crystallographic Orientation of NiO Thin Films Deposited by RE Magnetron Sputtering
Nickel oxide (NiO) thin films were prepared on Si(100) substrates at room temperature by RF magnetron sputtering using a NiO target. The effects of oxygen flow ratio for the plasma gas on the preferred orientation and surface morphology of the NiO films were investigated. Highly crystalline NiO film with (100) orientation was obtained when it was deposited in pure Ar gas. For NiO film deposited in pure O$_2$ gas, on the other hand, the orientation of the film changed from (100) to (111) and its deposition rate decreased. The origin of the preferred orientation of the films was discussed. NiO films also showed different surface morphologies and roughnesses with the oxygen flow ratio.
Key words: NIO thin film, RF magnetron sputtering, NiO target, Preferred orientation
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