Structural and Electrical Characteristics of Ferroelectric PLZT Thin Film Prepared on Pt Substrate by Sol-Gel Route

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J. Korean Ceram. Soc. > Volume 31(2); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(2): 171.

졸-겔법으로 백금 기판위에 제조된 PLZT 박막의 구조적, 전기적 특성변화

오영제, 김태송¹, 정형진

한국과학기술연구원 세라믹스부
¹한국과학기술연구원 정보전자연구부

Structural and Electrical Characteristics of Ferroelectric PLZT Thin Film Prepared on Pt Substrate by Sol-Gel Route

ABSTRACT

The spin-casted PLZT(9/65/35) thin films through polymeric sol-gel process were prepared on Pt substrate. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 35$0^{circ}C$ and $700^{circ}C$. The composite structure mixed together with large grains called "rosette" and surrounding small grains were observed on the films annealed over $600^{circ}C$. Pyrochlore phase was completely changed to perovskite phase above $600^{circ}C$ with the increase of annealing temperature. Dielectric constant (k) was larger with the increase of film thickness and annealing temperature. from the measurements of dielectric constant as a function of measuring temperature, it was also observed that Curie temperature was shifted to higher temperature with the increase of film thickness and annealing temperature. The pyroelectric coefficient(P) of 10 times coated film annealed at $700^{circ}C$ was 65 $mu$C/$textrm{cm}^2$.K.$.K.