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J. Korean Ceram. Soc. > Volume 40(11); 2003 > Article
Journal of the Korean Ceramic Society 2003;40(11): 1113.
doi: https://doi.org/10.4191/kcers.2003.40.11.1113
Zn 농도변화에 따른 ZnO 박막의 구조, 광학 및 전기적 특성 연구
한호철, 김익주, 태원필1, 김진규2, 심문식2, 서수정, 김용성
성균관대학교 정보통신용 신기능성 소재 및 공정연구센터
1인하대학교 소재연구소
Structural, Optical and Electrical Properties of ZnO Thin Films with Zn Concentration
We used isopropanol which has low boiling point to prepare thin films at low temperature and changed mole concentration of zinc acetate from 0.3 to 1.3 mol/l. The structural, optical and electrical properties of ZnO thin films with Zn content were investigated. ZnO thin films highly oriented along the c-axis were obtained at Zn concentration of 0.7 mol/l. ZnO thin films with Zn concentration of 0.7 mol/l showed a homogeneous surface layer of nano structure. The transmittance of ZnO thin films by UV-vis. measurement was about 87% under the Zn concentration of 0.7 mol/l, but rapidly decreased over the 1.0 mol/l. The optical band gap energy was obtained from 3.07 to 3.22 eV which is very close to the band gap of bulk ZnO (3.2 eV). The electrical resistivity of ZnO thin films was about 150 $Omega$-cm that shows little difference with Zn concentration. I-V curves of ZnO thin films exhibited typical ohmic contact properties.
Key words: Zinc oxide, Sol-gel method, Structural properties, Optical properties, Electrical properties
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