Characterization of Deep Dry Etching of Silicon Single Crystal by HDP

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doi:2002.39.6.570

J. Korean Ceram. Soc. > Volume 39(6); 2002 > Article

Journal of the Korean Ceramic Society 2002;39(6): 570.
doi: https://doi.org/10.4191/kcers.2002.39.6.570

HDP를 이용한 실리콘 단결정 Deep Dry Etching에 관한 특성

박우정, 김장현, 김용탁, 백형기, 서수정, 윤대호

성균관대학교 신소재공학과

Characterization of Deep Dry Etching of Silicon Single Crystal by HDP

ABSTRACT

The present tendency of electrical and electronics is concentrated on MEMS devices for advantage of miniaturization, intergration, low electric power and low cost. Therefore it is essential that high aspect ratio and high etch rate by HDP technology development, so that silicon deep trench etching reactions was studied by ICP equipment. Deep trench etching of silicon was investigated as function of platen power, etch step time of etch/passivation cycle time and SF$_$6/:C$_4$F$_$8/ flow rate. Their effects on etch profile, scallops, etch rate, uniformity and selectivity were also studied.

Key words: Inductively Coupled Plasma(ICP), Deep trench, Silicon dry etching