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J. Korean Ceram. Soc. > Volume 44(4); 2007 > Article
Journal of the Korean Ceramic Society 2007;44(4): 202.
doi: https://doi.org/10.4191/kcers.2007.44.4.202
1차원 InN 단결정 나노선의 구조특성에 대한 고찰
변윤기, 정용근, 이상훈1, 최성철
한양대학교 신소재공학과
1한양대학교 공학대학원 환경공학과
Structural Characteristic of One Dimensional Single Crystalline of InN Nanowires
Yun-Ki Byeun, Yong-Keun Chung, Sang-Hoon Lee1, Sung-Churl Choi
Department of Ceramic Engineering, Hanyang University
1Department of Environmental Engineering, Graduate School of Engineering, Hanyang University
High-Quality 1-Dimensional InN single crystalline have been grown by Halide Vapor-Phase Epitaxy on the Au catalyst coated Si substrate using the vapor-liquid-solid growth mechanism. We have been grown 1-dimension InN nanowires having controlled the growth conditions for substrate temperature and gases flow rate. The grown InN nanowire of characteristics for morphologies, crystal structure, and element analysis were carried out by SEM, HR-TEM, and EDS respectively. And the defects of InN crystalline were analyzed by indexing of selective area diffraction pattern with attached HR-TEM. We have successfully obtained the defect-free 1-dimensional InN single crystalline nanowire at the atmosphere pressure.
Key words: InN nanowire, HVPE, Defect free single crystalline, HR-TEM
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