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Journal of the Korean Ceramic Society 1997;34(1): 23. |
입계확산에 의한 반도성 $SrTiO_3$ 세라믹스의 입계구조 및 전기적 특성 변화 |
김태균, 조남희 |
인하대학교 무기재료공학과 |
The Effect of Grain Boundary Diffusion on the Boundary Structure and Electrical Characteristics of Semiconductive $SrTiO_3$ Ceramics |
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ABSTRACT |
Semiconductive SrTiO3 ceramic bodies were prepared by conventional ceramic powder processes in-cluding sintering in a reducing atmosphere. Sodium or potassium ions were diffused from the surface of the sintered bodies into the inner region using thermal diffusion process at 800-120$0^{circ}C$. The effects of such ther-mal treatments on the electrical and chemical characteristics of the grain boundaries were investigated. The presence of sodium or potassium ions at grain boundaries produces non-linear current-voltage behaviors, electrical boundary potential barriers of 0.1-0.2eV, and threshold voltages of 10-70V. The diffused ions form diffusion layers with thicknesses of 20-50nm near the grain boundaries, reducing the concentration of strontium and oxygen. |
Key words:
$SrTiO_3$, Semiconductive, Potential barrier, Diffusion layer |
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