| Photo-electronic Properties of Cd(Cu)S/CdS Thin Films and Diodes Prepared by CBD |
| Doo-Hee Cho, Kyong-Am Kim, Gi-Bong Song |
| Transparent Electronics Research Team, Electronic and Telecommunication Research Institute |
|
|
|
|
|
| ABSTRACT |
|
In this paper, CdS/Cd(Cu)S thin films and diodes were manufactured via a chemical bath deposition (CBD) process, and the effects of $NH_4Cl$ and TEA(triethylamine) on the properties of the films were examined. The addition of $NH_4Cl$ significantly increased the thickness of the CdS and Cd(Cu)S films, however, the addition of TEA decreased the thickness in both cases slightly. The addition of $NH_4Cl$ along with TEA increased the film thickness more effectively compared to the addition of only $NH_4Cl$. The thickness of the CdS film prepared from an aqueous solution of 0.007 M $CdSO_4$, 1.3 M $NH_4OH$, 0.03 M $SC(NH_2)_2$, 0.0001 M TEA and 0.03 M $NH_4Cl$ was 310 nm. Dark resistivity of the CdS film was $1.2{times}10^3;{Omega}cm$ and the photo resistivity with $500;W/cm^2$ irradiation of white light was $20{Omega}cm$. The Cd(Cu)S/CdS thin film diodes prepared by CBD showed good rectifying characteristics. |
| Key words:
CdS, Chemical bath deposition, Diode, Thin film |
|
PDF Links
Full text via DOI
Download Citation 
