Effect of Deposition Parameters on MgO Thin Films on Si(100) Substrates by Reactive RF Magnetron Sputtering

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J. Korean Ceram. Soc. > Volume 31(6); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(6): 643.

Reactive RF 마그네트론 스퍼터링법으로 Si(100) 기판에 MgO박막 제조시 증착변수의 영향

이영준, 백성기

포항공과대학교 재료·금속공학과

Effect of Deposition Parameters on MgO Thin Films on Si(100) Substrates by Reactive RF Magnetron Sputtering

ABSTRACT

Highly [100]-oriented MgO thin films were deposited on Si(100) single crystal substrates by reactive RF magnetron sputtering. The effects of substrate temperature, gas pressure, RF input powder, and gas composition on the characteristics of MgO thin films were studied. The higher substrate temperature and the lower operating pressure were, the better crystallinity of the deposited MgO thin films were. The influences of the RF input power and oxygen to argon ratio were very complex. The physical characteristics of the films changed dramatically with deposition conditions. Highly smooth and epitaxial MgO films were obtained at the deposition conditions as follows; subatrate temperature, $600^{circ}C$; operating pressure, 10 mtorr; RF input power density, 2 W/$textrm{cm}^2$; the percentage of oxygen, 10%.