| 비대칭 마그네트론 스퍼터링 방법에 의한 질화붕소막의 증착시 반응실내의 초기 수분이 입방정질화붕소 박막의 형성에 미치는 영향 |
| 이은숙, 박종극, 이욱성, 성태연1, 백영준 |
한국과학기술연구원 전자재료센터
1고려대학교 신소재공학과 |
| Effect of Moisture in a Vacuum Chamber on the Deposition of c-BN Thin Film using an Unbalanced Magnetron Sputtering Method |
| Eun-Sook Lee, Jong-Keuk Park, Wook-Seong Lee, Tae-Yeon Seong1, Young-Joon Baik |
Electronic Materials Center, Korea Institute of Science and Technology
1Department of Materials Science & Engineering, Korea University |
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| ABSTRACT |
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The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested. |
| Key words:
Boron nitride, Thin films, Water, Absorption, Heat treatment |
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