| Exploring the potential of halide perovskites in designing resistive switching memory systems for next-generation electronic devices |
| Hyerim Kim1, Woonbae Sohn2, Muhammad Hilal3, Zhicheng Cai3, Jian Hou4, Wonseop Shin3, Geon Kim3, Young-Seok Shim5, Cheon Woo Moon6, Hyojung Kim3 |
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
2Metropolitan Seoul Center, Korean Basic Science Institute, Seoul, 02855, Republic of Korea
3Department of Semiconductor Systems Engineering, Sejong University, Seoul, 05006, Republic of Korea
4School of Intelligent Manufacturing, Luoyang Institute of Science and Technology, Luoyang, 471023, China
5School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan, 31253, Republic of Korea
6Department of Display Materials Engineering, Soonchunhyang University, Asan, 31538, Republic of Korea |
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Received: March 29, 2025; Revised: July 7, 2025 Accepted: August 18, 2025. Published online: September 17, 2025. |
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| ABSTRACT |
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Emerging devices in the modern information era must demonstrate higher density, superior data processing performance, lower energy consumption, greater adaptability, multifunctionality, and compatibility with streamlined manufacturing. Owing to the limitations of current Si-based devices in meeting these demands, researchers are actively exploring novel active materials for future technologies, including metal oxide semiconductors, organic semiconductors, and two-dimensional (2D) materials. Halide perovskites, with their adjustable bandgap, enable the modulation of predominant charge carriers, facilitate swift ion transport, and off er considerable fl exibility. The hysteresis observed in current–voltage ( I – V ) profi les, stemming from rapid ion migration and diff erences between forward and reverse scanning currents, presents promising prospects for memristors and artifi cial synaptic devices that utilize halide perovskites beyond optoelectronic applications. Consequently, it is essential to comprehend both the structural and electrical attributes of halide perovskites. This review presents recent progress in resistive switching memory devices that incorporate halide perovskites and seeks to explain their distinctive characteristics. After examining the unique properties of halide perovskites that render them suitable for resistive switching memories, this review introduces a variety of pivotal investigations in this fi eld. Research into resistive switching memories must encompass a broad spectrum of halide perovskite compositions. In conclusion, this review comprehensively surveys prospective pathways for halide perovskites, highlighting their substantial promise. |
| Key words:
Resistive switching memory · 3D halide perovskites · 2D and quasi-2D halide perovskites · Pb-free halide perovskites |
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