| Resistive switching characteristics of NiO thin films deposited on highly oriented pyrolytic graphite substrates influenced by their thickness |
Ahmed I. Ali1,2, Jong Yeog Son1
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1Department of Applied Physics and Institute of Natural Sciences, College of Applied Science, Kyung Hee University, Suwon, 446-01, Republic of Korea
2Basic Science Department, Faculty of Technology and Education, Helwan University, Saray–El Qoupa, El Sawah Street, Cairo, 11281, Egypt |
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Received: November 25, 2024; Revised: February 17, 2025 Accepted: March 7, 2025. Published online: March 27, 2025. |
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| ABSTRACT |
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Understanding the working voltages, including the forming, set, and reset voltages of resistive random access memory (RRAM) capacitors, is important for the effective utilization of RRAM devices. Meanwhile, the surface of highly ordered pyrolytic graphite (HOPG) substrates has a carbon arrangement similar to graphene, which allows prediction of results for graphene. In this study, we investigated the RRAM characteristics of polycrystalline NiO films with thicknesses of 50, 40, and 30 nm deposited on HOPG single crystal substrates. In Ag/NiO/HOPG RRAM capacitors, the formation, set, and reset voltages increased and the distributions of the formation, set, and reset voltages decreased as the thickness decreased. As the volume in which conductive filaments (CF) are formed increases, the number of paths through which CF can be easily formed increases, which lowers the operating voltages. CF nanodots with diameters of 8.5, 7.4, and 6.5 nm, which are applicable to high-density data storage media with densities of 1.4, 1.8, and 2.4 T/cm2, were obtained through CF nanodot formation by a conducting atomic force microscope tip. |
| Key words:
NiO thin films · Highly ordered pyrolytic graphite substrates · Resistive switching · Thickness effect · Conducting filament nanodots |
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