Correction: Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films

Lee, Eunmi; Son, Jong Yeog; Lee, Eunmi; Son, Jong Yeog

doi:2025.62.3.574

J. Korean Ceram. Soc. > Volume 62(3); 2025 > Article

Correction

Journal of the Korean Ceramic Society 2025;62(3): 574-574.
doi: https://doi.org/10.1007/s43207-025-00486-1

Correction: Resistive random access memory characteristics of NiO, NiO_0.95, and NiO_0.95/NiO/NiO_0.95 thin films

Eunmi Lee¹

, Jong Yeog Son²

¹Department of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
²Department of Applied Physics and Institute of Natural Sciences, College of Applied Science, Kyung Hee University, Suwon, 446701, Republic of Korea

Correspondence

Eunmi Lee ,Email: eunme1210@gmail.com
Jong Yeog Son ,Email: jyson@khu.ac.kr

Published online: March 26, 2025.