| Optimization of the fabrication process for TiOx/Al2O3 bilayer memristor to enhance the switching uniformity and reliability |
Hae Jin Kim1,2
, Seung Soo Kim3, So Jeong Park3, Yura Oh2, Sua Han2 |
1Department of Electronic Materials, The University of Suwon, Hwaseong, 18323, Republic of Korea
2Department of Materials Science and Engineering, Myongji University, Yongin, 17058, Republic of Korea
3Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea |
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Received: January 21, 2025; Revised: February 19, 2025 Accepted: February 26, 2025. Published online: March 14, 2025. |
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| ABSTRACT |
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The electroforming process of the memristor establishes the conduction path and initiates the resistive switching behavior in memristors. However, the conductive paths formed during the electroforming process are hard to control its size and dimension due to the stochastic growth and dissolution, making it challenging to regulate the resistance values and eventually degrading the switching uniformity and reliability. Moreover, in devices requiring electroforming, the initial operating power consumption increases as the array size increases. In this study, a device fabrication process was explored and optimized to annihilate the electroforming step in TiOx/Al2O3 bilayer memristors. By compositional modulation of the switching layer and engineering of the oxide–electrode interface, quasi-electroforming-free switching was achieved, demonstrating a transition from abrupt to gradual resistive switching. The variability in pristine resistance and electroforming voltage was reduced by varying the oxide thickness and the post-annealing conditions. The fabricated devices also exhibited improved resistance modulation under compliance current control, improving the switching uniformity and reliability. Systematic electrical characterization was conducted and the measured electrical properties were analyzed to demonstrate the switching mechanism. This approach significantly improves resistance controllability and reduces switching variability, enabling stable low-power operation. The feasibility of implementation in neuromorphic hardware applications has been also confirmed. |
| Key words:
Resistive switching random access memory · Analog switching · Electroforming-free switching · Oxide memristor |
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