| Stretchable resistive switching memory devices for wearable systems |
Hyojung Kim1, In Hyuk Im2, Daijoon Hyun1, Muhammad Hilal1, Zhicheng Cai1, Seok Joo Yang3, Young-Seok Shim4, Cheon Woo Moon5
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1Present address: Department of Semiconductor Systems Engineering, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea
2Present address: Department of Materials Science and Engineering Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
3Present address: Department of Chemical Engineering, Gyeongsang National University, Jinju, 52828, Republic of Korea
4Present address: School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan, 31253, Republic of Korea
5Present address: Department of Display Materials Engineering, Soonchunhyang University, Asan, 31538, Republic of Korea |
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Received: July 14, 2024; Revised: September 29, 2024 Accepted: October 4, 2024. Published online: April 4, 2025. |
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| ABSTRACT |
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Smart healthcare and medical services have been among the fastest-growing AI applications. Stretchable electronics are being considered for flexible/stretchable paper displays, wearable computers, artificial electronic skin, and biomedical devices. Complex and dynamic mechanical environments in wearable applications that demand conformation and conformance necessitate stretchable electronic devices with malleable, mechanical properties. Exploring and discovering devices are popular, because electronic devices need flexible memory to store and retrieve data. The resistive switching memory device is the ideal contender for stretchable memory because of its basic metal–insulator–metal structure and the benefits of the patterned and crossbar-structured memory generated by oxygen vacancies and conductive metal filaments. Stretchable electronics and manufacturing methods are appealing, because wearable and integrated electronics systems are in demand. More innovative materials and device architecture have increased electronic device adaptability and lower production costs. This paper describes wearable and stretchable resistive switching memory device structures and materials. Next, it explains their operation and resistive switching. Also introduced are stretchable resistive switching memory electrodes, insulating layers, crossbar array topologies, and artificial synapse memristors. Moreover, stretchable memristors are utilized in smart sensor systems for data processing and storage. They can be employed in environmental sensors or biosensors to enhance signal processing and data storage. The stretchable memristor, now in its initial stage of development, exhibits significant potential and opportunity for enhancement. This early stage highlights the potential for significant progress shortly. |
| Key words:
Stretchable electronics · Resistive switching memory · Stretchable structures and materials |
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