| Dielectric properties of silicon-doped α-alumina derived from sol–gel process |
| Seong Guk Jeong1, Can Wang1, Jong Hee Kim1, Dae-Ho Yoon1,2 |
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
2SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 440-746, Republic of Korea |
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Received: November 2, 2021; Revised: March 22, 2022 Accepted: April 1, 2022. Published online: May 2, 2022. |
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| ABSTRACT |
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In this study, silicon-doped alumina (Al2O3) was synthesized using the sol–gel method. The composition and structure of silicon-doped alumina were analyzed using thermogravimetric-differential thermal analysis, X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy. As a result, it was found that the particle size of the silicondoped alumina was uniform, and the silicon doped in the α-Al2O3 lattice occupied the space of the oxygen octahedron to form a structure based on the Al–O–Si bond. Also, because of measuring the change in dielectric constant according to the amount of doped silicon, a value of the dielectric constant of 3.1 at 1 GHz frequency when the silicon doping amount was 2%. Therefore, it is thought to be applicable to the fields of microelectronics, electronic packaging and interconnection, small antenna arrays, and capacitors that require low-k materials. |
| Key words:
Alumina nanoparticle · Si doping · α Phase · Dielectric properties |
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