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J. Korean Ceram. Soc. > Volume 59(2); 2022 > Article
Journal of the Korean Ceramic Society 2022;59(2): 263-269.
doi: https://doi.org/10.1007/s43207-021-00155-z
Significantly enhanced charge transport in polysilicon by alleviating grain boundary scattering through interface control using reduced graphene oxide
Woo Hyun Nam1, Ju Hyoung Sun2, Hae Won Lee3, Na Won Kim3, Young Soo Lim2,3
1Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Jinju-si 52851, Korea
2Department of Materials System Engineering , Pukyong National University , Busan   48513 , Korea
3Department of Smart Green Technology Engineering , Pukyong National University , Busan   48513 , Republic of Korea
Correspondence  Young Soo Lim ,Email: yslim@pknu.ac.kr
Received: August 11, 2021; Revised: September 30, 2021   Accepted: October 20, 2021.  Published online: March 31, 2022.
ABSTRACT
Here, we introduce interface control of polycrystalline silicon (poly-Si) using reduced graphene oxide (RGO) as a promising way to minimize the grain boundary scattering for the enhancement of the charge transport properties in poly-Si. In this experiment, Si powder was prepared by pulverizing an As-doped Si wafer using high-energy ball milling. The Si powder was coated with RGO, and the composite was consolidated by spark plasma sintering. The interface-controlled Si (Si–RGO) composite exhibited significantly enhanced charge transport properties compared with bulk poly-Si. The release of trapped electrons through interface control using RGO reduced the grain boundary barrier height and resulted in a negative temperature dependence of the mobility in the Si–RGO composite. Consequently, the mobility and carrier concentration of the Si–RGO composite were simultaneously enhanced through interface control using RGO.
Key words: Si  · Reduced graphene oxide  · Charge transport  · Grain boundary scattering
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