| Thermoelectric transport properties of S‑doped In0.9Si0.1Se |
| Dong Ho Kim1, Hyun-Sik Kim2, Jamil Ur Rahman3, Weon Ho Shin4, TaeWan Kim5, Sang-il Kim1 |
1Department of Materials Science and Engineering, University of Seoul, Seoul 02504, South Korea
2Department of Materials Science and Engineering, Hongik University, Seoul 04066, South Korea
3Department of Physics, University of Oslo, 0371 Oslo, Norway
4Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea
5Department of Electrical Engineering and Smart Grid Research Center, Jeonbuk National University, Jeonju 54896, South Korea |
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Received: June 25, 2021; Revised: September 16, 2021 Accepted: September 28, 2021. Published online: January 31, 2022. |
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| ABSTRACT |
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Layered metal chalcogenides with highly promising thermoelectric properties have attracted attention owing to their intrinsically low thermal conductivity, which originates from their unique layered structure and van der Waals bonding. InSe, a post-transition metal chalcogenide, also has layered atomic structure and low thermal conductivity. We investigate the effects of S doping of Si-doped InSe, In0.9Si0.1Se. The S-doped In0.9Si0.1Se exhibits enhanced thermoelectric properties, with a higher power factor and lower thermal conductivity compared to Si-doped InSe. A significant increase in carrier mobility has an overall positive effect on the electronic transport properties, resulting in a systematic increase in power factor from 0.05 to 0.15 mW/mK2 with S doping. In addition, the thermal conductivity systematically decreases with S doping owing to additional point-defect scattering. Because of the higher power factor and lower thermal conductivity, the thermoelectric figure of merit of the In0.9Si0.1Se0.9S0.1 sample at 735 K was 0.18, which is 3.6 times that of In0.9Si0.1Se. |
| Key words:
Thermoelectric · Metal chalcogenides · Anion doping |
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