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J. Korean Ceram. Soc. > Volume 59(1); 2022 > Article
Journal of the Korean Ceramic Society 2022;59(1): 86-93.
doi: https://doi.org/10.1007/s43207-021-00149-x
Plasma‑resistant characteristics according to sintering conditions of CaO–Al2O3–SiO2 glass coating layer
Yoon Sung Jung1,2, Kyung Won Min1,2, Jae Ho Choi1,2, Ji Sob Yoon1,2, Won Bin Im1, Hyeong-Jun Kim2
1Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea
2Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology, Icheon 17303, Gyeonggi‑Do, Korea
Correspondence  Hyeong-Jun Kim ,Email: goldbud@kicet.re.kr
Received: July 18, 2021; Revised: August 26, 2021   Accepted: September 26, 2021.  Published online: January 31, 2022.
The present study examined how the microstructure and plasma-resistant characteristics of CaO–Al2O3–SiO2 (CAS) glass layers coated on sintered alumina substrates were affected by the applied sintering conditions. Coated layers were formed using a bar-coating method, subsequently subjected to the de-binding process, and then finally sintered at temperatures lower than the crystallization temperature of the glass, ranging from 950 to 1000 °C, for varying durations. The coated layer composed solely of CAS glass exhibited an etch rate approximately four times lower than that of alumina. The lowest etch rate of the CAS glass layer was 13.25 nm/min at 950 °C 15 min, showing the best plasma resistance. It was also found that the glass layers became increasingly crystallized with increasing temperature and duration, and this then reduced their plasma resistance. The etch rate of glass when crystalline phases were present was found to be 35.31 nm/min.
Key words: Glass thick coating · Plasma dry etching · Fluorocarbon plasma · Etch rate · Plasma resistance glass · And crystallinity
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