| Resistive switching characteristic of Ce0.9Y0.1O2/ TiO2 bi‑layer structure by photochemical metal‑organic deposition |
Sung‑Eun Kim, Jin‑Gyu Lee, In‑Young Choi, Ha‑Eun Kim, Hong‑Sub Lee
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| Department of Materials Science and Engineering, Kangwon National University, 1 Kangwondaehak‑gil, Chuncheon, Gangwon 24341, South Korea |
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Received: October 29, 2019; Revised: November 13, 2019 Accepted: November 15, 2019. Published online: January 31, 2020. |
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| ABSTRACT |
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Sneak current is one of the main bottlenecks for dense crossbar array resistive random access memory. This study reports highly non-linear resistive switching characteristic from Ce0.9Y0.1O2/ TiO2 bi-layer (1S/1R device) structure, fabricated by photochemical metal-organic deposition, as a solution for sneak current issue. Ce0.9Y0.1O2 material, possessing oxygen vacancies, was used as a potential barrier as well as oxygen reservoir which rectified the current of low resistance state without an electrical breakdown in 1S/1R device. TiO2 was adopted for resistive switching property, and TiO2 layer having mixed phase (anatase and brookite) showed typical diode switching behavior. The photochemical reaction of photochemical metal-organic deposition process and phase formation were monitored and established using by Fourier-transform infrared spectroscopy and X-ray diffraction, respectively. The 1S/1R device showed highly non-linear resistive switching characteristic, large on/ off ratio of above three orders of magnitude with low operating current. |
| Key words:
Electrical properties · Films · Resistive switching · ReRAM · Sneak current |
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