| Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method |
| Ji Sook Park, Hwa Jun Lee, Sung Soo Ryu, Sung Min Lee, Hae Jin Hwang1, Yoon Soo Han |
Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology
1Department of Materials Science and Engineering, Inha University |
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| ABSTRACT |
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It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of $300^{circ}C-700^{circ}C$ and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded $Si_3N_4$ substrates for power devices to enable low carbon and oxygen contents in green tape samples. |
| Key words:
Silicon nitride, Silicon, Tape casting, Reaction bonding, Thick films |
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