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J. Korean Ceram. Soc. > Volume 52(2); 2015 > Article
Journal of the Korean Ceramic Society 2015;52(2): 108.
doi: https://doi.org/10.4191/kcers.2015.52.2.108
Deformation of Amorphous GeSe2 Film under Uniaxial Pressure Applied at Elevated Temperatures
Byeong Kyou Jin, Jun Ho Lee, Jeong Han Yi, Woo Hyung Lee, Sang Yeol Shin, Yong Gyu Choi
Department of Materials Science and Engineering, Korea Aerospace University
In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.
Key words: Chalcogenide glass, Amorphous Ge-Se film, Imprinting, Surface crystallization
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