| 결정질 실리콘 태양전지의 패시베이션 적용을 위한 Al2O3/SiON 적층구조의 열적 안정성에 대한 연구 |
| 조국현, 장효식 |
| 충남대학교 에너지과학기술대학원 |
| A Study on the Thermal Stability of an Al2O3/SiON Stack Structure for c-Si Solar Cell Passivation Application |
| Kuk-Hyun Cho, Hyo Sik Chang |
| Graduate School of Energy Science Technology, Chungnam National University |
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| ABSTRACT |
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We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{circ}C$ and $850^{circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks. |
| Key words:
Passivation, Blistering, Thermal stability, Effective carrier lifetime |
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