Microstructure Evolution and Dielectric Characteristics of CaCu3Ti4O12 Ceramics with Sn-Substitution |
Cheong-Han Kim, Kyung-Sik Oh, Yeong-Kyeun Paek |
The Center of Green Materials Technology, Department of Materials Science and Engineering, Andong National University |
|
|
|
ABSTRACT |
The doping effect of Sn on the microstructure evolution and dielectric properties was studied in $CaCu_3Ti_{4-x}Sn_xO_{12}$ polycrystals. Samples were produced by a conventional solid-state reaction method. Sintering was carried out at $1115^{circ}C$ for 2-16 h in air. The dielectric constant and loss were examined at room temperature over a frequency range between $10^2$ and $10^6$ Hz. The microstructure was found to evolve into three stages. Addition of $SnO_2$ led to an increase in density and advanced formation of abnormal grains. The formation of coarse grains with a reduced thickness of the boundary brought about an enhanced dielectric constant and a lower dielectric loss below ~1 kHz. EDS data showed the Cu-rich phase along the grain boundary, which should contribute to the improved dielectric constant according to the internal barrier layer capacitor model. After all, $SnO_2$ was an effective dopant to elevate the dielectric characteristics of $CaCu_3Ti_{4-x}Sn_xO_{12}$ polycrystals as a promoter for abnormal grain growth. |
Key words:
Sn-substituted CCTO, Giant dielectric constant, Dielectric properties, Abnormal grains, Internal barrier layer capacitor |
|
|
TOOLS |
 |
PDF Links |
 |
Full text via DOI |
 |
Download Citation
|
 |
Share:
|
 |
METRICS  |
|
|
Related articles |
Correction: Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films 2025 May;62(3) |
A first principle study of the structural, electronic, and magnetic phase transitions in perovskite CaCu3Co4O12 via Resubstitution at the Cosite 2025 January;62(1) |
Influence of Yb-doping on structural, dielectric and electrical properties of SrBi2Nb2O9 ceramics prepared through the molten-salt method 2024 November;61(6) |
Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films 2024 July;61(4) |
Structural, electronic, magnetic, thermal and thermoelectrical properties of CdCu3Fe4O12 quadruple perovskite complex: an ab initio calculations 2024 March;61(2) |
|
|