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J. Korean Ceram. Soc. > Volume 49(6); 2012 > Article
Journal of the Korean Ceramic Society 2012;49(6): 663.
doi: https://doi.org/10.4191/kcers.2012.49.6.663
RF-마그네트론 스퍼터링에 의해 제조된 In1.6Zn0.2Sn0.2O3-δ 박막의 투과율 및 전기 전도성에 미치는 증착 온도의 영향
서한, 지미정, 안용태, 주병권1, 최병현
Effect of the Deposition Temperature on the Transmittance & Electrical Conductivity of In1.6Zn0.2Sn0.2O3-δ Thin Films Prepared by RF-magnetron Sputtering
Han Seo, Mi-Jung Ji, Yong-Tea An, Byeong-Kwon Ju1, Byung-Hyun Choi
Electronic Materials Laboratory, Korea Institute of Ceramic Engineering & Technology
1Display and Nanosystem Laboratory, College of Engineering, Korea University
In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of $In_{1.6{sim}1.8}Zn_{0.2}Sn_{0.2{sim}0.4}O_3$ (IZTO), $In_{1.6}Zn_{0.2}Sn_{0.2}O_{3-{delta}}$(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at $400^{circ}C$, the electrical resistivity of the film decreased to $6.34{times}10^{-4}{Omega}{cdot}cm$ and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.
Key words: TCOs, Thin films, Indium, $In_{1.6}Zn_{0.2}Sn_{0.2}O_{3-{\delta}}$, Deposition temperature
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