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J. Korean Ceram. Soc. > Volume 49(6); 2012 > Article
Journal of the Korean Ceramic Society 2012;49(6): 631.
doi: https://doi.org/10.4191/kcers.2012.49.6.631
터널 산화막 두께에 따른 Al2O3/Y2O3/SiO2 다층막의 메모리 특성 연구
정혜영, 최유열, 김형근, 최두진
연세대학교
A Study of the Memory Characteristics of Al2O3/Y2O3/SiO2 Multi-Stacked Films with Different Tunnel Oxide Thicknesses
Hye Young Jung, Yoo Youl Choi, Hyung Keun Kim, Doo Jin Choi
Department of Materials Science and Engineering, Yonsei University
ABSTRACT
Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.
Key words: Charge trap flash, $Y_2O_3$, Tunnel oxide, High-k dielectrics, SONOS
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