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J. Korean Ceram. Soc. > Volume 49(5); 2012 > Article
Journal of the Korean Ceramic Society 2012;49(5): 448.
doi: https://doi.org/10.4191/kcers.2012.49.5.448
Comparative Study of Nitrogen Incorporated SnO2 Deposited by Sputtering of Sn and SnO2 Targets
Youngrae Kim, Sarah Eunkyung Kim1
Microsystem Packaging Center, Seoul Technopark
1Graduate School of NID Fusion Technology, Seoul National University of Science and Technology
ABSTRACT
Nitrogen-incorporated $SnO_2$ thin films were deposited by rf magnetron sputtering. Comparative structural, electrical and optical studies of thin films deposited by sputtering of the Sn metallic target and sputtering of the $SnO_2$ ceramic target were conducted. The $SnO_2$ thin films deposited by sputtering of the Sn metallic target had a higher electrical conductivity due to a higher carrier concentration than those by sputtering of the $SnO_2$ ceramic target. Structurally the $SnO_2$ thin films deposited by sputtering of the $SnO_2$ ceramic target had a better crystallinity and a larger grain size. This study confirmed that there were distinct and clear differences in electrical, structural, and optical characteristics between $SnO_2$ thin films deposited by reactive sputtering of the Sn metallic target and by direct sputtering of the $SnO_2$ ceramic target.
Key words: Thin films, Tin compounds, Electrical conductivity, Semiconductors
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