| RF 열플라즈마를 이용한 TEOS로 부터의 SiC 나노분말 합성 |
| 고상민, 구상만1, 김진호, 김지호, 변명섭, 황광택 |
한국세라믹기술원 이천분원
1한양대학교 화학공학과 |
| Synthesis of SiC Nano-powder from TEOS by RF Induction Thermal Plasma |
| Sang-Min Ko, Sang-Man Koo1, Jin-Ho Kim, Ji-Ho Kim, Myeong-Seob Byeon, Kwang-Taek Hwang |
Korea Institute of Ceramic Engineering and Technology
1Department of Chemical Engineering, Hanyang University |
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| ABSTRACT |
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Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. RF Thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) has been utilized for synthesis of high purity SiC powder from cheap inorganic solution (Tetraethyl Orthosilicate, TEOS). It is found that the powders by thermal plasma consist of SiC with free carbon and amorphous silica ($SiO_2$) and, by thermal treatment and HF treatment, the impurities are driven off resulting high purity SiC nano-powder. The synthesized SiC powder lies below 30 nm and its properties such microstructure, phase composition, specific surface area and free carbon content have been characterized by X-ay diffraction (XRD), field emission scanning electron microscopy (FE-SEM), thermogravimetric (TG) and Brunauer-Emmett-Teller (BET). |
| Key words:
RF thermal plasma, Silicon carbide (SiC), TEOS, Nano powder |
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