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J. Korean Ceram. Soc. > Volume 47(6); 2010 > Article
Journal of the Korean Ceramic Society 2010;47(6): 623.
doi: https://doi.org/10.4191/kcers.2010.47.6.623
ZnO 반도체 나노선의 패턴 성장 및 전계방출 특성
이용구, 박재환, 최영진1, 박재관1
충주대학교 전자공학과
1한국과학기술연구원 나노재료센터
Patterned Growth of ZnO Semiconducting Nanowires and its Field Emission Properties
Yong-Koo Lee, Jae-Hwan Park, Young-Jin Choi1, Jae-Gwan Park1
Department of Electronic Engineering, Chungju National University
1Nano-Materials Center, Korea Institute of Science and Technology
We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50;{mu}m$ and the pattern was arrayed as $4{times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4;V/{mu}m$ and the emission current was $5;mA/cm^2$. The threshold electric field was $5.4;V/{mu}m$ in the $4{times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.
Key words: ZnO, Nanowire, Patterning, Field emission display, FED
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