| 터널링 산화막 두께 변화 및 열처리에 따른 Al2O3/TaAlO4/SiO2 다층막의 전기적 특성에 관한 연구 |
| 박정태, 김효준, 최두진 |
| 연세대학교 신소재공학과 |
| Electrical Characteristics of Al2O3/TaAlO4/SiO2 Multi-layer Films by Different Tunnel Oxide Thicknesses and Annealing Treatment |
| Jung-Tae Park, Hyo-June Kim, Doo-Jin Choi |
| Department of Materials science and Engineering, Yonsei University |
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| ABSTRACT |
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In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles. |
| Key words:
$TaAlO_4$, High-k, MOCVD, Retention, Annealing |
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