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J. Korean Ceram. Soc. > Volume 46(3); 2009 > Article
Journal of the Korean Ceramic Society 2009;46(3): 336.
doi: https://doi.org/10.4191/kcers.2009.46.3.336
나노 적층 구조를 응용한 저항성 기반 비휘발성 메모리 소자 특성 제어
유일환, 황진하
홍익대학교 신소재공학과
Control of Charge Transports in Nonvolatile Resistive Memory Devices through Embedded Nanoscale Layers
Yil-Hwan You, Jin-Ha Hwang
Department of Materials Science and Engineering, Hongik University
ABSTRACT
Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems.
Key words: Resistive Switching, Nickel oxide, Filaments, Insulating layers
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