| 저압화학기상증착법을 이용한 ZrC 성장에 잔류시간이 미치는 영향 |
| 박종훈, 정충환, 김도진1, 박지연 |
한국원자력연구원 원자력재료연구부
1충남대학교 재료공학과 |
| Residence Time Effect on the Growth of ZrC by Low Pressure Chemical Vapor Deposition |
| Jong-Hoon Park, Choong-Hwan Jung, Do-Jin Kim1, Ji-Yeon Park |
Division of Nuclear Material Research, Korea Atomic Energy Research Institute
1Department of Materials Engineering College of Engineering Chungnam National University |
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| ABSTRACT |
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In order to investigate residence time effect on the growth of ZrC film, the ZrC films grew with various system total pressure (P) and total flow rate (Q) by low pressure chemical vapor deposition because residence time is function of system total pressure and total flow rate. Thermodynamic calculations predict that the decomposition of source gases ($ZrCl_4$ and $CH_4$) would be low as increasing the residence time. Thermodynamic calculations results were proved by investigating deposition rate with various residence time. Deposition rate decreased with residence time of source gas increased. Besides, depletion effect accelerated diminution of deposition rate at high residence time. On the other hands, the deposition rated was increased as decreasing the residence time because fast moving of intermediate gas species decrease the depletion effect. The crystal structure was not changed with residence time. However, the largest size of faceted grain showed up to specific residence time and the size of grain was decreased whether residence time increase or not. |
| Key words:
ZrC, CVD, Residence time, Depletion effect |
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