| Synthesis of Forsterite with High Q and Near Zero TCf for Microwave/Millimeterwave Dielectrics |
| Hitoshi Ohsato, Minato Ando, Tsutomu Tsunooka |
| Nagoya Institute of Technology |
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| ABSTRACT |
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With the advent of ubiquitous age, the high quality dielectric materials have been required for the wireless communications available to the millimeterwave as well as microwave frequencies. The utilizable region for the frequency has been expanding to the millimeter-wave region because of the shortage of radio frequency (RF) resources. These high frequencies would be expected for ultra high speed LAN, ETS and car anti-collision system on the intelligent transport system (ITS) and so on. Silicates are good candidates for microwave/millimeterwave dielectrics, because of their low dielectric constant ${epsilon}_r$ and high quality factor (High Q). Forsterite ($Mg_2SiO_4$) is one of the silicates with low ${epsilon}_r$ of 6.8 and Q f of 240000 GHz. In this paper, we reviewed following three categories for synthesis of forsterite: (1) Synthesis of high Q forsterite (2) Adjust the temperature coefficient of resonant frequency $TC_f$ (3) Diffusion of $SiO_{4^-}$ and Mg-ions on the formation of forsterite. |
| Key words:
Forsterite, Microwave/millimeterwave dielectrics, Raw materials, Diffusion of Si and Mg-ions |
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