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J. Korean Ceram. Soc. > Volume 44(11); 2007 > Article
Journal of the Korean Ceramic Society 2007;44(11): 645.
doi: https://doi.org/10.4191/kcers.2007.44.1.645
RF 스퍼터링을 이용하여 저온에서 SiO2/Si 기판 위에 증착된 La0.7Sr0.3MnO3 박막의 구조 및 전기적 특성
최선규, A. Sivasankar Reddy, 하태정, 유병곤1, 박영호
연세대학교 신소재공학부
Structural and Electrical Properties of SiO2/Si Film on La0.7Sr0.3MnO3Substrate by RF Magnetron Sputtering at Low Temperature
Sun-Gyu Choi, A. Sivasankar Reddy, Tae-Jung Ha, Byoung-Gon Yu1, Hyung-Ho Park
School of Advanced Materials Science and Engineering, Yonsei University
1Electronics and Telecommunications Research Institute
The $La_{0.7}Sr_{0.3}MnO_3$ was deposited on $SiO_2/Si$ substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was $350^{circ}C$. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.
Key words: Bolometer, CMR, LSMO, $SiO_2$, TCR
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