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J. Korean Ceram. Soc. > Volume 43(9); 2006 > Article
Journal of the Korean Ceramic Society 2006;43(9): 532.
doi: https://doi.org/10.4191/kcers.2006.43.9.532
Al Doped ZnO 박막의 열처리에 따른 태양전지용 투명전도막 특성
김봉석, 김응권, 김용성1
성균관대학교 전자전기 및 컴퓨터공학과
1성균관대학교 정보통신용 신기능성 소재 및 공정연구센터
Properties of TCO Fabricated with Annealing Temperature of Al Doped ZnO Film for Solar Cell Application
Bong-Seok Kim, Eung-Kwon Kim, Young-Sung Kim1
Department of Information and Communication, Sungkyunkwan University
1Advanced Material Process of Information Technology, Sungkyunkwan University
The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{times}10^{-2}{Omega}{cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{circ}C$ are enhanced up to $5{times}10^{-4}{Omega}{cdot}cm$ and 85%, respectively.
Key words: Al doped ZnO, Annealing temperature, Solar cell, TCO
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