| Gd0.33Sr0.67FeO3 세라믹스의 전기전도 특성 |
| 정우환 |
| 호원대학교 조명학부 |
| Electrical Transport Properties of Gd0.33Sr0.67FeO3 Ceramics |
| Woo-Hwan Jung |
| Division of Illumination, Howon University |
|
|
|
|
|
| ABSTRACT |
|
In this study, the dielectric, magnetic and transport properties of $Gd_{0.33}Sr_{0.67}FeO_3$ have been analyzed. The dielectric loss anomaly was found to be around 170 K. The activation energy corresponding to relaxation process of this dielectric anomaly was 0.17 eV. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dielectric relaxation peak observed is correlated with polaron hopping between $Fe^{3+};and;Fe^{4+}$ ions. The electrical resistivity displayed thermally activated temperature dependence above 200 K with an activation energy of 0.16 eV. In addition, the temperature dependence of thermoelectric power and resistivity suggests that the charge carrier responsible for conduction is strongly localized. |
| Key words:
Dielectric relaxation, Hopping process, Thermoelectric power, Variable range hopping |
|
|
| TOOLS |
 |
 PDF Links |
|
 Full text via DOI |
|
 Download Citation
|
|
Share: 
|
|
METRICS  |
|
|
|
| Related articles |
| Correction: Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films 2025 May;62(3) |
| Electrically conductive Si3N4 bonded SiC: effect of Fe2O3, MoO3, and SiC particle size 2025 January;62(1) |
| Influence of Yb-doping on structural, dielectric and electrical properties of SrBi2Nb2O9 ceramics prepared through the molten-salt method 2024 November;61(6) |
| Structural, electrical, optical and magnetic properties of Bi2-xLaxFeCrO6 (x = 0.4, 0.6) double perovskites for device applications 2024 July;61(4) |
| Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films 2024 July;61(4) |
|
|
