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J. Korean Ceram. Soc. > Volume 42(9); 2005 > Article
Journal of the Korean Ceramic Society 2005;42(9): 624.
doi: https://doi.org/10.4191/kcers.2005.42.9.624
ZrO2 완충층과 SBT 박막의 열처리 과정이 SrBi2Ta2O9/ZrO2/Si 구조의 계면 상태 및 강유전 특성에 미치는 영향
오영훈, 박철호, 손영구
부산대학교 재료공학부
The Effect of the Heat Treatment of the ZrO2 Buffer Layer and SBT Thin Film on Interfacial Conditions and Ferroelectric Properties of the SrBi2Ta2O9/ZrO2/Si Structure
Young-Hun Oh, Chul-Ho Park, Young-Guk Son
School of Materials Science and Engineering, Busan National University
ABSTRACT
To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.
Key words: buffer layer, thin film, MFIS structure ferroelectric random access memory
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