| PECVD 법에 의해 제작된 저굴절률 차이 평판 SiON광도파로 |
| 김용탁, 윤석규, 윤대호 |
| 성균관대학교 신소재공학과 |
| Low Index Contrast Planar SiON Waveguides Deposited by PECVD |
| Yong-Tak Kim, Seok-Gyu Yoon, Dae-Ho Yoon |
| Department of Advanced Materials Engineering, Sungkyunkwan University |
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| ABSTRACT |
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Silicon oxynitride (SiON) layers deposited upon a $SiO_2/Si$ buffer layer placed upon silicon wafers have been obtained by using PECVD from $SiH_4,;N_2O$, and $N_2$. It can be seen that the refractive index, measured by using a prism coupler, for the SiON films can be varied between 1.4480 and 1.4958 at a wavelength of 1552 nm by changing the process parameters. Optical planar waveguides with a thickness of $6{mu}m$ and a refractive index contrast ($Delta$n) of $0.36% have been deposited. Also, etching experiments were performed using ICP dry etching equipment on thick SiON films grown onto Si substrates covered by a thick $SiO_2$ buffer layer. A polarization maintaining single-mode fiber was used for the input and a microscope objective for the output at $1.55{mu}m$. As a result, a low index contrast SiON based waveguide is fabricated with easily adjustable refractive index of core layer. It illustrates that the output intensity mode is a waveguiding single-mode. |
| Key words:
PECVD, Silicon oxynitride, Single-mode, Annealing |
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