| PbO 완충층을 이용한 Pt/Pb1.1Zr0.53Ti0.47O3/PbO/Si (MFIS)의 미세구조와 전기적 특성 |
| 박철호, 송경환, 손영국 |
| 부산대학교 재료공학부 |
| Microstructure and Electrical Properties of the Pt/Pb1.1Zr0.53Ti0.47O3/PbO/Si (MFIS) Using the PbO Buffer Layer |
| Chul-Ho Park, Kyoung-Hwan Song, Young-Guk Son |
| School of Materials Science and Engineering, Pusan National University |
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| ABSTRACT |
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To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{circ}C$. |
| Key words:
PbO buffer layer, MFIS structure, Ferroelectric properties, Ferroelectric random access memory |
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