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J. Korean Ceram. Soc. > Volume 42(1); 2005 > Article
Journal of the Korean Ceramic Society 2005;42(1): 28.
doi: https://doi.org/10.4191/kcers.2005.42.1.028
이중 이온빔으로 제작한 Ta2O5 박막의 기판 온도 및 보조 이온빔 에너지에 따른 굴절률과 판류응력의 변화
윤석규, 김용탁, 김회경1, 김명진1, 이형만1, 윤대호
성균관대학교 신소재공학과
1전자부품연구원 광부품연구센터
Change of Refractive Index and Residual Stresses of Ta2O5 Thin Film Prepared by Dual Ion Beam Sputtering Deposition as the Substrate Temperature and Assist ion Beam Energy
Seok-Gyu Yeon, Yong-Tak Kim, Hwek-Yung Kim1, Myoung-Jin Kim1, Hyung-Man Lee1, Dae-Ho Yoon
Department of Advanced Materials Engineering, Sungkyunkwan University
1Optical Telecommunication Research Center, Korea Electronics Technology Institute
The optical properties and intrinsic stress of $Ta_{2}O_{5}$ thin films deposited by Dual ion-Beam Sputtering: (DIBS) and Single ion-Beam Sputtering (SIBS) were studied as a function of the substrate temperature and assist ion beam voltage. The refractive index showed the maximum value (n = 2.144) at $150^{circ}C$ in the SIBS process. When the substrate temperature has above $150^{circ}C$ in the SIBS process the refractive index decreased. In the DIBS process, the increase of the substrate temperature affected the increase of the refractive index at a maximum value (n = 2.1117, at $200^{circ}C$). The low temperature process $(<100^{circ}C)$ can greatly reduce residual stress with the assist ion gun, but the high temperature process was unaffected. As the assist ion beam voltage increase from 250 to 350 V the refractive index increased to 2.185. However, the refractive index was decreased at the range of 350-650 V, As the assist ion beam voltage increased, the stress of the deposited film decreased to 0.1834 GPa at 650 V.
Key words: Dual ion beam sputtering, Refractive index, Intrinsic stress, Ion beam voltage
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