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J. Korean Ceram. Soc. > Volume 41(8); 2004 > Article
Journal of the Korean Ceramic Society 2004;41(8): 578.
doi: https://doi.org/10.4191/kcers.2004.41.8.578
인접 Pd-MILC가 Ni-MILC에 미치는 영향
김영수, 김민선1, 오현욱1, 최성희1, 주승기
서울대학교 재료공학부
1서울대학교 재료공학
Effect of Adjacent Pd on Ni-MILC
ABSTRACT
In this study, we proposed the novel method that can crystallize the amorphous silicon by adjacent Pd-MILC enhanced Ni-MILC. With this method, the MILC rate was about 15 ${mu}$m/h at 550$^{circ}C$ which is four times faster than conventional MILC rate. The crystallization rate increased rapidly with the spacing between Ni and Pd decreased. And it was independent on Ni and Pd layer thickness and amorphous silicon active width. However, when Pd was capped by a Ni layer, there's no enhancement on Ni-MILC. This phenomenon implies that the enhancement of Ni-MILC rate comes from not Pd material itself but Pd-MILC induced tensile stress. We can explain these phenomena with a novel MILC mechanism.
Key words: Pd-MILC, Ni-MILC, Tensile stress, Novel MILC mechanism
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