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J. Korean Ceram. Soc. > Volume 41(5); 2004 > Article
Journal of the Korean Ceramic Society 2004;41(5): 364.
doi: https://doi.org/10.4191/kcers.2004.41.5.364
Effect of O2 Partial Pressure on AlOx Thin Films Prepared by Reactive Ion Beam Sputtering Deposition
Jin-Wook Seong, Ki-Hyun Yoon1, Ki-Hwan Kim2, Young-Whoan Beag2, Seok-Keun Koh
P & I Corp., Shinnae Techotown
1Department of Ceramic Engineering, Yonsei Universit
2P & I Corp., Shinnae Techotow
The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.
Key words: $AlO_x$ thin film, Reactive Ion Beam Sputtering (RIBS), Oxygen partial pressure, Deposition rate, Oxygen Transmission Rate (OTR)
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