| Home | E-Submission | Sitemap | Login | Contact Us |  
top_img
J. Korean Ceram. Soc. > Volume 41(4); 2004 > Article
Journal of the Korean Ceramic Society 2004;41(4): 273.
doi: https://doi.org/10.4191/kcers.2004.41.4.273
Nonvolatile Semiconductor Memories Using BT-Based Ferroelectric Films
Bee-Lyong Yang, Suk-Kyoung Hong1
Kumoh National Institute of Technology, Department of Materials Science and Engineering
1Memory R & D Division, FeRAM Device Team, Hynix Semiconductor
ABSTRACT
Report ferroelectric memories based on 0.35$mutextrm{m}$ CMOS technology ensuring ten-year retention and imprint at 175$^{circ}C$. This excellent reliability resulted from newly developed BT-based ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen. The superior reliabilities at high temperature of ferroelectric memories using BT-based films are due to the random orientation by special bake treatments.
Key words: Ferroelectric, BT, Memory, Orientation, Reliability
TOOLS
PDF Links  PDF Links
Full text via DOI  Full text via DOI
Download Citation  Download Citation
CrossRef TDM  CrossRef TDM
  E-Mail
Share:      
METRICS
0
Crossref
0
Scopus
1,150
View
12
Download
Related article
Editorial Office
Meorijae Bldg., Suite # 403, 76, Bangbae-ro, Seocho-gu, Seoul 06704, Korea
TEL: +82-2-584-0185   FAX: +82-2-586-4582   E-mail: ceramic@kcers.or.kr
About |  Browse Articles |  Current Issue |  For Authors and Reviewers
Copyright © The Korean Ceramic Society.                      Developed in M2PI