| 음극전착법을 이용한 Cu2O 막의 광전기 화학적 특성 |
| 이은호, 정광덕1, 주오심1, 최승철 |
아주대학교 재료공학과
1한국과학기술연구원 나노-환경 연구센 |
| Photoelectrochemical Characteristics for Cathodic Electrodeposited Cu2O Film on Indium Tin Oxide |
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| ABSTRACT |
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Cuprous oxide (Cu$_2$O) thin films are cathodically deposited on Indium Tin Oxide (ITO) substrate. The as-deposited films were heat-treated at 30$0^{circ}C$ to obtain Cu$_2$O. After the heat treatment, the film was changed from Cu metal into Cu$_2$O phase. The phase, morphology and photocurrent density of the films were dependent on the preparation conditions of deposition time, applied voltage, and the duration of heat treatment. The Cu$_2$O films were characterized by X-Ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The apparent grain size of the films formed by the normal method was larger than those grown by the pulse method. The CU$_2$O film what was deposited at -0.7 V for 300 sec and then, calcined at 30$0^{circ}C$ for 1 h showed the predominant photocurrent density of 1048 $mu$A/$textrm{cm}^2$. And the stability of Cu$_2$O electrodes were improved with chemically deposited TiO$_2$ thin films on Cu$_2$O. |
| Key words:
Cuprous oxide film, Cathodic-electrode position, Photocurrent density, Chemical deposited $TiO_2$ |
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